Abstract
Extended x-ray absorption fine structure (EXAFS) has been used to measure the bond length in a 23 Å epitaxial Gd2O3 film grown on GaAs(001). The Gd–O bond length is determined to be 2.390±0.013 Å, which corresponds to a +0.063±0.013 Å increase or a +2.7%±0.6% bond-length strain relative to the bond length in a bulk Gd2O3 powder. Using a simple model for the strained film that matches the [001] and [−110] axes of Gd2O3 with the [110] and [1–10] axes of the GaAs(001) surface, the measured bond-length increase of the film determined by EXAFS agrees well with the perpendicular lattice distortion of the film determined by diffraction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
