Abstract
Qubits based on crystal defect centers have been shown to exhibit long spin coherence times, up to seconds at room temperature. However, they are typically characterized by a comparatively slow initialization timescale. Here, fluorine implantation into ZnSe epilayers is used to induce defect states that are identified as zinc vacancies. We study the carrier spin relaxation in these samples using various pump-probe measurement methods, assessing phenomena such as resonant spin amplification, polarization recovery, and spin inertia in transverse or longitudinal magnetic field. The spin dynamics in isotopically natural ZnSe show a significant influence of the nuclear spin bath. Removing this source of relaxation by using isotopic purification, we isolate the anisotropic exchange interaction as the main spin dephasing mechanism and find spin coherence times of 100 ns at room temperature, with the possibility of fast optical access on the picosecond time scales through excitonic transitions of ZnSe.
Highlights
Qubits based on crystal defect centers have been shown to exhibit long spin coherence times, up to seconds at room temperature
Before we discuss the spin dynamics, we compare the two samples presented in Fig. 1a and demonstrate the effect of fluorine implantation on their optical properties
The single intense peak associated with free exciton recombination (FX) is found around 2.806 eV, see Figs. 1a and b
Summary
Qubits based on crystal defect centers have been shown to exhibit long spin coherence times, up to seconds at room temperature. They are typically characterized by a comparatively slow initialization timescale. Several prominent solid-state implementations fulfill these criteria by using long-living, isolated qubits in a crystal structure, with optical accessibility through excitation across the optical band gap. Some of these qubits are based on defect centers, like nitrogen- or silicon-vacancies in diamond or divacancies in silicon carbide[8,11,12,13]. The spin coherence for resident carriers in quantum dots is typically limited to the microsecond range at low temperatures (around 10 K)[17,18]
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