Abstract
An extended source double-gate tunnel FET (ESDG-DMTFET) based biosensor is proposed for label free detection of biomolecules. The proposed device consists of two parallel gates with source extended into the channel so that channel overlaps the source on both sides. The cavities are carved in the gate-oxide towards drain side in order to maximize the impact of change in dielectric constant of biomolecules on the source-channel tunnelling junction leading to substantial improvement in the performance of ESDG-DMTFET. Based on 2D simulations in TCAD simulator (ATLAS), the proposed biosensor is demonstrated to achieve two order of magnitude improvement in current sensitivity and eight times higher threshold voltage sensitivity as compared to reported TFET based biosensors.
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