Abstract
A new surface structure sensitive technique was used to study bismuth adsorption on an a-Si surface. The technique is based on the extended (oscillating) fine structure in the energy dependence of the elastic peak intensity. It was found that the mean interatomic distance at theBi/Si interface increased with Bi coverage. It is noteworthy that, in the submonolayer region, the mean interatomic distance increases linearly with Bi coverage. We thus propose to treat the Bi/Si interface as a “quasi-2D-solid solution”.
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