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Abstract
Different strain-balanced InGaAs/InGaAs multiple quantum wells(MQWs) were grown on (001) InP changing the In composition in thewells/barriers in order to extend the absorption edge beyond 2 μm forthermophotovoltaic applications. The strain increase in the structuresresults in the formation of isolated highly defected regions taking theirorigin from lateral layer thickness modulations. Experimental results areconsistent with the existence of a critical elastic energy density for thedevelopment of MQW waviness. An empirical model for predicting themaximum number of layers that can be grown without modulations as afunction of the strain energy stored in the MQW period is presented.
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