Extended defect system as a main source of non‐radiative recombination in InGaN/GaN LEDs

Abstract

AbstractThe results of low‐frequency noise study of three sets of LEDs classified for their low voltage leakage current (LC) values are reported. The LC values at 1‐2.5 V integrally characterize electrical properties of extended defect system (EDS) that is typical for InGaN/GaN structures. The lower LC value, the smaller concentration of extended defects is. It has been shown that low‐frequency noise peculiarities such as the shape of current dependences of the noise spectral density (SI) and increase in SI with an LC values growth are caused by EDS presence. The point defects (PD) contribution to non‐radiative recombination processes is observed in current density region 10‐2 – 10 A/cm2 where radiative recombination prevails. The non‐radiative caused by EDS at j < 10‐2 A/cm2 and at j > 10 A/cm2. The complicated behavior of EDS with an injection current change has been observed (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)