Extended defect study in Si: EBIC versus LBIC

Abstract

A comparative study of multicrystalline Si and plastically deformed single crystalline Si by the electron (EBIC) and laser beam induced current (LBIC) methods has been carried out. It is shown that the LBIC contrast of two-dimensional defects in crystals with large diffusion length can be a few times higher than that in the EBIC method. Thus, in recent Si structures the LBIC method allows to reveal grain boundaries with the lower recombination velocity than the EBIC on. The advantages of LBIC for the dislocation trail study in Si and for backside metallization effects in solar cells are demonstrated.