Extended-defect reduction by uniform heating for P+-implanted Si wafers

Abstract

P was implanted into 76-mm-diam (111) Si wafers at an energy of 40 keV with a dose of 2.54×1016/cm2. An increase in extended defects was found at a high insertion speed of wafer loading into a furnace at 1000–1100 °C in a N2 ambient. The increase was due to nonuniformity in the temperature history and resultant thermal stress in the wafer, though no slip line was observed. The temperature nonuniformity was monitored by thermal-oxide thickness nonuniformity for heating in a dry-O2 ambient. A low insertion speed resulted in uniform heating and reduced extended defects.