Abstract
The standard analytical method identifies a momentum-relaxation rate with the absorption rate whereas the model of Conwell and Vassell involves both emission and absorption rates suitably weighted by momentum exchange. Both models estimate mobility in a relaxation-time approximation. They obtain roughly the same room-temperature result for GaAs but differ by almost a factor of 3 for bulk GaN and a factor of 2 for quasi-2D GaN, the standard model predicting the lower value. In this report the physics behind this difference is shown to be associated with the ratio and with the frequency of electron-electron scattering, the standard model being valid only for electron concentrations that are not too high.
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