Abstract
AbstractIn this paper, we study the large-time behavior of a numerical scheme discretizing drift–diffusion systems for semiconductors. The numerical method is finite volume in space, implicit in time, and the numerical fluxes are a generalization of the classical Scharfetter–Gummel scheme which allows to consider both linear or nonlinear pressure laws.We study the convergence of approximate solutions towards an approximation of the thermal equilibrium state as time tends to infinity, and obtain a decay rate by controlling the discrete relative entropy with the entropy production. This result is proved under assumptions of existence and uniform in time
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