Abstract
The effect of explosive crystallization in NiSi films on a-Si 3N 4/Si(111) and Fe on Si(100) prepared by a laser plasma vapour deposition (LPVD) at room temperature is reported. The films were studied using cross-sectional electron microscopy, XPS and AES. NiSi co-deposited films with atomic concentration ratio Ni/Si = 2 revealed a crystalline and sharply textured structure after deposition. The formation of crystalline, textured layers was found to occur at the film/substrate interface for Ni/Si films with a variation of the elemental composition through the film thickness. The formation of iron monosilicide (FeSi), 40 nm thick, was shown to occur during deposition at RT for Fe films on Si(100). The described efects are considered to occur due to the positive feedback of the released latent heat during the relaxation of non-equilibrium layers forming during LPVD at RT through the mechanism of explosive crystallization.
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