Abstract
Phase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Yet, simultaneously achieving better thermal stability and fast switching remains a key challenge. Thus, exploring novel materials with improved characteristics is of utmost importance. We report here, a unique property-portfolio of high thermal stability and picosecond threshold switching characteristics in In3SbTe2 (IST) PCM devices. Our experimental findings reveal an improved thermal stability of amorphous IST compared to most other phase change materials. Furthermore, voltage dependent threshold switching and current-voltage characteristics corroborate an extremely fast, yet low electric field threshold switching operation within an exceptionally small delay time of less than 50 picoseconds. The combination of low electric field and high speed switching with improved thermal stability of IST makes the material attractive for next-generation high-speed, non-volatile memory applications.
Highlights
Phase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory
There is an ever increasing demand for storing huge amounts of data. This is due to advancements in various key areas including embedded systems and the Internet of things (IoT), which enables interactions among various electronic devices used in our daily life
The programming speed of PCMs largely depends on the set operation, in which the crystallization process is initiated by threshold switching[18,19]
Summary
Phase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Owing to its desirable attributes of rapid crystallization, improved thermal stability, scaling and multi-resistance levels, IST shows considerable potential to realize memory devices with universal characteristics, promising to enable ultrafast programming capabilities.
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