Exploring the transformation: High-dosage gamma irradiation's role in tuning structural, optical, and electrical properties of cadmium-doped lead sulfide (PbS) nanoparticles

Abstract

The effects of gamma irradiation on Cadmium-doped PbS (Cd-PbS) nanoparticles are thoroughly examined in this lattice study. The study sheds light on the changes in structural, morphological, and electrical properties brought about by Cd doping and gamma irradiation by employing a variety of methods such as X-ray diffraction, FESEM imaging, EDAX analysis, Raman spectroscopy, photoluminescence (PL) spectra, and Hall effect measurements. The Cd-doped PbS shows a fluctuating crystallite size as the average size first increases by ∼3 nm and then decreases by ∼3 nm with Cd concentration. This is due to the induced strain by the Cd dopant, which has a smaller ionic radius compared to Pb ions. With Cd substitution, the bandgap of PbS first decreases from 2.29 eV to 2.19 eV and then increases with mild fluctuations. Meanwhile, gamma irradiation causes these changes, decreasing the bandgap from 2.19 eV to 2.03 eV for lower Cd concentrations (x = 0.005) and increasing it to 2.41 eV for higher concentrations (x=0.01). The Hall data shows a wide range shift in electrical characteristics between the cadmium doped gamma-irradiated sample, and the pure sample, PS0. The electrical mobility increases from 6.05 V−1s−1 for PS0 to 4.95×102 V−1s−1 for GPS3 (higher cadmium concentration of x = 0.02), indicating a significant enhancement in which charge carriers can move through the material post-irradiation. Electrical resistivity shows a drastic increase from 4.42×101 Ωcm in PS0 to 9.41×102 Ωcm in GPS3, suggesting a marked increase in electrical conductivity post-irradiation. The findings demonstrate considerable changes in crystal characteristics, morphological transformations, increased crystallinity, and changed electrical properties, showing the promise of gamma-irradiated Cd-doped PbS in advanced optoelectronic device applications.