Abstract
We investigate the performance and reliability characteristics of Cu interconnects with Ta-based barrier layers and Co wetting layers at 7nm node dimensions with a focus on the impacts of reducing the Co thickness from 30A down to 10A. We demonstrate that while reducing Co liner thickness significantly reduces RC delay, there is a significant reduction in electromigration reliability below a thickness of 20A if used in conjunction with a PVD (physical vapor deposition) TaN barrier. However, if the PVD treatment is followed by deposition of a thin ALD (atomic layer deposition) TaN, the Co layer thickness can be scaled down to 10A without any penalty in either electromigration or time dependent dielectric breakdown (TDDB.) The combined PVD/ALD process with 10A Co enables a 14% reduction in RC delay relative to our control split.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
