Abstract
A near-infrared (NIR)-based photodetector has been designed for carbon dot and silicon nanowire heterostructures by tuning the surface modification via sulphur (S-CQD) and nitrogen (N-CQD) doping in carbon dots. The ideality factor (η), barrier height (ϕB), and series resistance (Rs) are evaluated at various temperatures (303 K–250 K) to shed light on inhomogeneity and potential surface barriers at the interfaces between two nanostructures. Such control of the dopants and inhomogeneity between the interfaces has been postulated with the Cheung model, which provides a negligible difference between sulphur and nitrogen-based CQDs. The electron-withdrawing effect of sulphur on the CQD surface induces more p-type character, and p-n junction formation enhances the responsivity (622.22 mA/W) and detectivity (2.15 × 1012Jones).
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