Abstract
The increasing demands on the energy storage capacity of dielectric capacitors require the exploration of suitable dielectric material systems. In the present work, Pb1−xLaxHfO3 (x = 0, 0.1, 0.2, 0.3 and 0.4) films grown on Pt/Ti/SiO2/Si substrates were fabricated via a conventional chemical solution approach. The lanthanum substitution can result in enhanced electric breakdown strengths (EBDS) for all the compositions, varying from 2030.1 to 4162.7 kV/cm. The electrical properties and microstructure reveal that the antiferroelectric state gradually weakens or even disappears with the increase of La content. The Pb0.9La0.1HfO3 film presents an excellent energy storage performance, with recoverable energy density of 47.5 J cm−3 and energy efficiency of 60.0 %, thanks to the largest ΔP of 55.1 μC/cm2 and enhanced EBDS. Meantime, it exhibits excellent frequency and thermal stability over the studied frequency range (500 Hz-20 kHz) and wide temperature range (25–200 °C). The results shed light on that Pb0.9La0.1HfO3 film capacitor have potential for practical applications.
Published Version
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