Abstract
In the exploration of new energy sources and the search for a path to sustainable development the reliable operation of wind turbines is of great importance to the stability of power systems. To ensure the stable and reliable operation of the Insulated Gate Bipolar Transistor (IGBT) power module, in this work the influence of changes with aging of different electro-thermal parameters on the junction temperature and the case temperature was studied. Firstly, power thermal cycling tests were performed on the IGBT power module, and the I-V characteristic curve, switching loss and transient thermal impedance are recorded every 1000 power cycles, and then the electrical parameters (saturation voltage drop and switching loss) and the thermal parameters (junction-to-case thermal resistance) of the IGBT are obtained under different aging states. The obtained electro-thermal parameters are substituted into the established electro-thermal coupling model to obtain the junction temperature and the case temperature under different aging states. The degrees of influence of these electro-thermal parameters on the junction temperature and case temperature under different aging states are analyzed by the single variable method. The results show that the changes of the electro-thermal parameters under different aging states affects the junction temperature and the case temperature as follows: (1) Compared with other parameters, the transient thermal impedance has the greatest influence on the junction temperature, which is 60.1%. (2) Compared with other parameters, the switching loss has the greatest influence on the case temperature, which is 79.8%. The result provides a novel method for the junction temperature calculation model and lays a foundation for evaluating the aging state by using the case temperature, which has important theoretical and practical significance for the stable operation of power electronic systems.
Highlights
At present, scientists all over the world are striving to explore new energy sources and seeking a path to sustainable development
In order to simplify the analysis of the effect of electro-thermal parameters on the junction temperature and case temperature, this study only considers the effect of heat generated by Insulated Gate Bipolar Transistor (IGBT) chip, which has no influence on the accuracy of the result
The single parameter method is used to study the influence of electro-thermal parameters on junction temperature and case temperature
Summary
Scientists all over the world are striving to explore new energy sources and seeking a path to sustainable development. In the assessment of the aging state of IGBT, the aging state of the power module is often evaluated by monitoring the changes of certain parameters, which include the saturation voltage drop, junction-to-case thermal resistance, switching time, gate signal, and junction temperature [8]. Whether the saturation voltage drop or the junction-to-case thermal resistance is used to evaluate the aging state of the IGBT power module, the junction temperature will be used. (2) Analyzing and temperature, can simplify theelectro-thermal junction temperature calculation and provide a new idea comparing thewhich influence of different parameters on the model junction temperature and case for further studying the simplify relationship betweentemperature case temperature and switching loss of IGBT. Section the analyzes the results, the coupling junction of this study is organized as follows: describes process of thetest electro-thermal temperature and the case temperature under different aging the state are calculated, and thetemperature degrees of model.
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