Exploring the effect of facile i-line photolithography on the structure and physicochemical properties of photosensitive glass ceramics

Abstract

Photosensitive glass-ceramics exhibit significant potential to replace silicon materials in the microfabrication of micro-electro-mechanical-system (MEMS) devices. However, they are constrained by the limitations of a conventional 320-nm photolithography process. Therefore, developing an ideal industrial i-line (365 nm) photolithography for Li2O–Al2O3–SiO2 photosensitive glass-ceramics is urgently needed. This study initially explores the impact of a facile i-line photolithography on the structure and physicochemical properties of photosensitive glass ceramics. We experimentally showcase a direct, scalable, and straightforward i-line photolithography technique for Li2O–Al2O3–SiO2 photosensitive glass ceramics. Our research concentrates on how the exposure time affects the properties of Li2O–Al2O3–SiO2 photosensitive glass ceramics, particularly regarding nucleation and crystallization. This is achieved by adjusting the exposure time parameter and utilizing XRD, etching experiments, SEM, TEM, and other tests under a i-line light source. By optimizing the exposure process parameters, we also modify the annealing process parameters affecting the crystallization of lithium metasilicate in the exposed areas. Under a treatment process involving an exposure time of 20 min, a nucleation temperature of 500 °C, a crystallization temperature of 630 °C, and a nucleation/crystallization duration of 2 h, the sample achieves the highest crystal quantity and the optimal thickness-etching rate ratio.