Abstract
In current research, we study the effect of Os and Os-Mn/Ru co-doping onto the GaN. We study the electronic structure, optical, and magnetic properties of these materials. We employ the PBE-GGA approximation in the Wien2k code using density functional theory. The study of electronic properties reveals that Mn 3d-states, Ru 4d-states and Os 5d-states highly influence the transfer of electrons from valence to conduction band. The Os-Mn/Ru co-doping turns GaN magnetic while Os doping does not alter non-magnetic character of GaN. Optical absorption spectra shows blueshift upon adding impurities and materials shows good absorption in the UV region. A decrease in reflectivity and increase in conductivity in the high energy UV region reveals that these materials may be used for fabrication of devices in the field of photonic, optoelectronic, photovoltaics, solar cells, photodetectors, and power electronics.
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