Abstract
This contribution explores different strategies to electrically contact vertical pillars with diameters less than 100 nm. Two process strategies have been defined, the first based on Atomic Force Microscope (AFM) indentation and the second based on planarization and reactive ion etching (RIE). We have demonstrated that both proposals provide suitable contacts. The results help to conclude that the most feasible strategy to be implementable is the one using planarization and reactive ion etching since it is more suitable for parallel and/or high-volume manufacturing processing.
Highlights
The electronics industry has extensively manufactured Metal Oxide SemiconductorField-Effect-Transistor (MOSFET) devices by using planar topology for many decades
reactive ion etching (RIE) cycles until theeffectiveness top face of the pillar is we explore the feasibility of extending this method to contact high aspect ratio vertical structures
Contact). (c) Schematics showing a top metal contact performed by means of Atomic Force Microscope (AFM) nano-indentation. (d) Schematics of a top-metal contact performed by resist back-etching
Summary
Field-Effect-Transistor (MOSFET) devices by using planar topology for many decades. Scaling down the technology node beyond 32 nm has appeared problematic in terms of reliability, mainly because their performance is significantly degraded at these dimensions, e.g., by device variability and short channel effects. Vertical nanowires can be used as building blocks for other devices, like single-electron transistors (SETs) or light emitters [3,4] This type of device can involve many advantages in terms of area and performance (e.g., lower short channel effects), a more challenging manufacturing process is required, especially regarding procedures that create device contacts. Nanomaterials 2020, 10, 716; doi:10.3390/nano10040716 www.mdpi.com/journal/nanomaterials force microscopy (AFM) that allows a nano-contact to be precisely placed on the top region of the pillar [7] This method has been previously used to contact planar structures with high effectiveness [8,9]. RIE cycles until theeffectiveness top face of the pillar is we explore the feasibility of extending this method to contact high aspect ratio vertical structures. The layer by performing consecutive RIE cycles until the top face of the pillar is again exposed
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