Exploring Shannon entropy and heat capacity of doped GaAs quantum dot under the influence of noise

Abstract

Present enquiry explores the Shannon entropy and the corresponding heat capacity of GaAsquantum dot (QD) which is doped with Gaussian impurity and under the aegis of Gaussian white noise (GWHN). GWHN may take additive and multiplicative routes for its entrance to the doped QDs. The enquiry analyzes the features of temperature-dependence of above thermodynamic properties and also the effect of various physical parameters on them at a given temperature. The study reveals some kind of complex interplay involving the temperature zone, presence/absence of GWHN, mode of application of GWHN and the particular physical parameter concerned which ultimately shapes the profiles of entropy and heat capacity. Often, the study reveals competitive behavior between thermal disorder and spatial disorder which noticeably affects the said thermal properties. Moreover, the study also highlights some unusual behavior in the entropy profiles only under multiplicative noise of high noise strength.