Abstract
This article explores the electrical performance of capacitive memory and resistive switching (RS) devices based on thin films of a single active layer of Silicon oxide (SiOx). The fabricated device Au/SiOx/p-Si displayed frequency-dependent characteristics ranging from 200 kHz to 1 MHz w.r.t capacitance. The charge trapping nature was also investigated, which revealed a charge storage density (N) of order 1010 cm−2 and a low trapping density of interface (Dit) ∼2.65 × 1011 eV−1 cm−2. Furthermore, the device exhibits bipolar RS behavior while maintaining a stable endurance for 1000 DC sweeping cycles and a good retention period of > 103 s. The major pathway of the conduction mechanism in these devices is attributed to the accumulation of oxygen vacancies near the Au/SiOx interface. The conduction in this device is predominantly governed by trap-mediated space-charge-limited current (SCLC) and ohmic conductions.
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