Exploring Neuromorphic Computing with Double-Gate Floating Device Based on Van Der Waals Heterostructures

Abstract

Neuromorphic devices represent a frontier in technological development, aiming to emulate the intricate parallel functionalities inherent to the human brain [1, 2]. Traditional computing models, such as Von Neumann architecture, grapple with limitations in parallel processing, prompting the exploration of neuromorphic computing to integrate memory and processing efficiently. Our research presents the double gate floating device based on Vander Waals heterostructure (DG-VH-FET), employing molybdenum disulfide (MoS2), hexagonal boron nitride (h-BN), and graphene (Gr) as key components. These devices, based on 2D materials, enable independent modulation of channel doping through electrostatic means [3].In this study, we initially assessed the fundamental characteristics of the floating gate, including transfer characteristics, output characteristics, retention, and endurance. By applying constant drain-to-source voltages (VDS) while introducing variations in the back gate voltage (VBG) sweeping range, the memory window of the transfer characteristics changes. Conversely, maintaining a constant VBG and VDS while varying the top gate voltage (VTG) solely results in a shift in the threshold voltage of the memory window. This is attributed to the crucial role of VBG in charge trapping in the floating gate layer, with the influence of VTG on charge trapping being negligible due to the screening effect of MoS2 [4]. Moreover, by using VTG and VBG this study shows that DG-VH-FET could have potential applications in exploring and understanding various neurological effects, thereby bridging the gap between electronics and biology. Figure 1