Abstract
The escalating demand for imaging devices operating in harsh environments has prompted investigations into the applicability of diamond, often called the ultimate semiconductor material. A multigate field effect transistor (FET) is a crucial component of Charge-Coupled Devices (CCDs) for imaging devices, and we developed it on a hydrogen-terminated diamond (H-diamond) for the first time. This milestone not only showcased the potential realization of diamond CCDs but also provided key insights for future research. Specifically, this paper explores the electrical and structural needs to achieve signal transmission throughout the fabricated diamond multigate FET.
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