Abstract
The supporting substrate plays a crucial role in preserving the superb electrical characteristics of an atomically thin 2D carbon system. We explore carrier transport behavior in a chemical-vapor-deposition- (CVD-) assembled graphene monolayer on hexagonal boron nitride (h-BN) substrate. Graphene-channel field-effect transistors (GFETs) were fabricated on ultra-thin h-BN multilayers to screen out carrier scattering from the underlying SiO2 substrate. To explore the transport phenomena, we use three different approaches to extract carrier mobility, namely, effective carrier mobility (μeff), intrinsic carrier mobility (μ), and field-effect mobility (μFE). A comparative study has been conducted based on the electrical characterization results, uncovering the impacts of supporting substrate material and device geometry scaling on carrier mobility in GFETs with CVD-assembled graphene as the active channel.
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