Exploration the p-type doping mechanism of GaAs nanowires from first-principles study

Abstract

Using first-principle calculations, we present a systematic investigation upon the influence of p-type doping on the structural and electronic properties of H-passivated GaAs nanowires with wurtzite structure. The GaAs nanowire models of different doping types, different doping elements, different doping positions and different doping concentrations are established. The calculated formation energies show that Zn element becomes more competitive or even slightly favored in realizing p-type doping compared to Be element. For an individual Zn incorporation model, Zn atom tends to substitute the subsurface Ga atom. As increasing Zn doping concentration, the p-type doping process becomes more and more difficult. Besides, both interstitial and substitutional doping lead to the distortion of atomic structure near impurity atoms and cause the ionicity of GaAs nanowires enhanced. The p-type doped GaAs nanowires models are all direct band gap semiconductors. After substitutional doping, the total density of state curves shift toward higher energy sides and the Fermi level entering valence bands. Our calculations provide a significant reference for the preparation of p-type doping GaAs nanowire, which has a promising potential application in the field of photocathodes.