Exploration of structure and bonding in stishovite with fourier and pseudoatom refinement methods using single crystal and powder X-ray diffraction data

Abstract

The structure and bonding in stishovite, SiO2, is explored with Fourier summation and pseudoatom refinement of merged x-ray single crystal and powder diffraction data. Replacement of the 25 lowest-angle, highly extinction-affected, single crystal reflections with structure factors obtained from low-extinction powder diffraction data has resulted in a significant improvement in the analysis compared with earlier studies. The deformation electron density, total electrostatic potential and total and valence electron densities are mapped. Accumulations of electron density are observed in both SiO bonds, together with non-bonding features displayed about the oxygen on both sides of a plane formed by three bonds with Si. Deficits of electron density between O atoms across the shared-edges are rationalized in terms of the Pauli exclusion principle. There is no evidence for strong repulsion of Si atoms across the same ring. The total electrostatic potential has a continuous low value for the vacant channels in the structure along c with localized minima between O atoms on opposite sides of the channel. The sizes of Si and O are related to the electron density and to the electrostatic potential.