Abstract
Robustness of topological surface state to non-magnetic doping and no intrinsic magnetism adheres to its applications in the field of permanent magnetism, including quantum devices, data storage, and signal transfer. In this perspective, doping of Mn is carried out in antimony telluride to induce permanent magnetism in topological materials. The MnxSb2-xTe3 (x = 0 and 0.1) is grown through the self-flux method under well-optimized heat treatment, and its structural confirmation and compositional assets are investigated through powder X-ray diffraction and scanning electron microscopy, respectively. Further, the magnetic and transport properties analysis ensures the presence of paramagnetic ordering and tuneable magnetoresistance, which opens a wide area for quantum and spintronics devices.
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