Abstract
Synchrotron single-crystal X-ray diffraction has revealed diffuse scattering alongside sharp satellite reflections for different samples of mullite (Al4+2x Si2-2x O10-x ). Structural models have been developed in (3+1)-dimensional superspace that account for vacancy ordering and Al/Si ordering based on harmonic modulation functions. A constraint scheme is presented which explains the crystal-chemical relationships between the split sites of the average structure. The modulation amplitudes of the refinements differ significantly by a factor of ∼3, which is explained in terms of different degrees of ordering, i.e. vacancies follow the same ordering principle in all samples but to different extents. A new approach is applied for the first time to determine Al/Si ordering by combining density functional theory with the modulated volumes of the tetrahedra. The presence of Si-Si diclusters indicates that the mineral classification of mullite needs to be reviewed. A description of the crystal structure of mullite must consider both the chemical composition and the degree of ordering. This is of particular importance for applications such as advanced ceramics, because the physical properties depend on the intrinsic structure of mullite.
Highlights
The crystal structure of mullite (Al4+2xSi2À2xO10Àx) has been a matter of investigation since the structure of the mineral sillimanite was solved (Taylor, 1928), which is chemically and structurally closely related to mullite
Synchrotron measurements of 2/1-mullite samples were used to investigate the vacancy and Al/Si ordering of the crystal structure
A new disordered superspace model was developed based on the refinement of four different samples with compositions close to that of 2/1-mullite
Summary
The crystal structure of mullite (Al4+2xSi2À2xO10Àx) has been a matter of investigation since the structure of the mineral sillimanite was solved (Taylor, 1928), which is chemically and structurally closely related to mullite. The main difference is the presence of oxygen vacancies with a concentration x that ranges between about 0.20 and 0.57, though it can be extended to about 0.9 depending on the synthesis conditions (Schneider et al, 2015). The distribution of these vacancies within the crystal structure is still a matter of debate. Little is known about the distribution of Al and Si on the tetrahedral sites, though in general it is assumed that Si does not occupy tricluster tetrahedra, derived from the electrostatic bond-valence rule
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