Exploiting Model Hierarchy in Semiconductor Design Using Manifold Mapping

Abstract

In this paper we solve an optimal doping profile control problem for semiconductors using the manifold mapping technique. As coarse and fine approximation we employ the drift diffusion and energy transport model, respectively. In this work the manifold mapping technique is applied for the first time to a problem in which the number of design variables varies with the finite element mesh points employed. The advantage of our approach is that it allows to optimize the energy transport model without having to implement an adjoint code while at the same preserving computational efficiency. Numerical results giving evidence of this claim for different values of the applied voltage will be shown.