Abstract
The response of a neat semiconductor gas sensor to a reducing gas has successfully been formulated theoretically as a function of the partial pressure of target gas under the conditions of volume depletion and the presence of residual electrons inside the depletion region. This was achieved by considering the steady state of resistance instead of that of the surface density of adsorbed oxide ions. The derived equation, given as a combination of several physicochemical parameters, reproduces main features of practical response behavior well. It is exemplified that the equation provides the analysis or extension of response data with an important theoretical base.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
