Abstract
A thin interlayer of Pt can greatly improve the thermal stability of NiSi films formed by rapid thermal annealing (RTA) on Si(1 1 1) substrates, as was revealed by X-ray diffraction (XRD) data, Micro-Raman analysis and sheet resistance measurement. Thomas–Fermi–Dirac (TFD) equations are combined with Miedema's Model to calculate the heat of formation of NiSi. The reduction in the heat of formation of NiSi induced by the Pt interlayer is proposed as a possible reason for the improved thermal stability of NiSi and the retarded transition to NiSi 2 during high temperature annealing.
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