Experiments of a Lateral Power Device With Complementary Homogenization Field Structure

Wentong Zhang,Yang Wu,Nailong He,Ming Qiao,Sen Zhang,Bo Zhang,Ke Zhang,Zhaoji Li,Zhili Zhang

doi:10.1109/led.2021.3115134

Abstract

A lateral power device with complementary homogenization field structure (C-HOF) is proposed and experimentally proved in this letter. The C-HOF is formed by introducing a P-type metal insulator semiconductor (P-MIS) on the N-MIS. The complementary P/N-MIS and the PN junction between them ensure the homogenized field <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {hof}}$ </tex-math></inline-formula> distributions and the high breakdown voltage <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {B}}$ </tex-math></inline-formula> in higher doping. Based on the C-HOF mechanism, experiments were performed, which demonstrated that a significantly increased N-drift doping dose up to 6.8 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times \,\,10^{{12}}$ </tex-math></inline-formula> cm −2 can be realized in the C-HOF device. A measured low specific on-resistance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ {{\scriptscriptstyle \text{ ON}}},\text {sp}}$ </tex-math></inline-formula> of 19.7 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula> cm 2 was observed in the C-HOF device under a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {B}}$ </tex-math></inline-formula> of 426 V, realizing a high figure of merit <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$FOM = {V}_{\text {B}}^{{2}}/{R}_{ {{\scriptscriptstyle \text{ON}}},\text {sp}}$ </tex-math></inline-formula> of 9.21 MW/cm 2 and a reduction of 42.8% when compared with the theoretical value of the triple RESURF technology under the same <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {B}}$ </tex-math></inline-formula> .

Full Text