Abstract

Bulk tungsten samples were irradiated sequentially with 20 MeV tungsten ions and exposed to deuterium plasma. The experiments were performed in order to simulate the displacement damage that fusion neutrons will cause in a tungsten plasma-facing component of a future fusion device. To study the influence of the presence of hydrogen isotopes during the creation of displacement damage on the final defect density, tungsten irradiation and deuterium decoration cycles were performed up to three times. Deuterium depth profiling with 3He Nuclear Reaction Analysis and Thermal Desorption Spectroscopy showed that the deuterium concentration increased after each additional tungsten irradiation and deuterium exposure. After the third cycle, the deuterium concentration reached a maximum of 3.6 at.% at the given plasma exposure temperature of 370 K. We attribute this increase in retention to the stabilization of the displacement damage during the tungsten irradiation by the presence of deuterium. The experimental results were simulated using the MHIMS-R macroscopic rate-equation code, which was recently upgraded with a damage stabilization term to describe experiments where tungsten was irradiated with MeV tungsten ions and simultaneously exposed to low-energy deuterium ions. Using this novel model, it was possible to quantitatively describe also the present results for the sequential irradiation/exposure scheme, with model parameters that were congruent with parameters derived from the simultaneous experiment. Modelling shows that kinetic de-trapping of trapped deuterium takes place during irradiation However, it is not the dominant process that explains defect stabilization. In addition, the model facilitates the extrapolation of present experimental results to an even larger number of sequential tungsten irradiation and deuterium exposure cycles. The model predicts that after about five sequential irradiation and plasma exposure cycles, a stationary state is reached with an associated maximum trapped D concentration of 4.2 at.% for the given exposure temperature of 370 K.

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