Abstract
It is shown that micro-Raman spectroscopy offers a unique tool for the validation of stress models for microelectronics devices. Starting from an analytical or numerical model that describes the variation of local stress in a device, the corresponding Raman shift is calculated and compared with the data. In this way feed-back is given to the model. This technique is demonstrated for stripes (Si3N4, COSi2, W) on a Si substrate, but can be applied to any device where Raman data can be obtained.
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