Abstract
We have investigated effects of the vertical scaling on electrical properties in extremely thin-body InAs-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs). It is found that the body thickness (Tbody) scaling provides better short channel effect (SCE) control, whereas the Tbody scaling also causes the reduction of the mobility limited by channel thickness fluctuation (δTbody) scattering (μfluctuation). Also, in order to achieve better SCEs control, the thickness of InAs channel layer (Tchannel) scaling is more favorable than the thickness of MOS interface buffer layer (Tbuffer) scaling from a viewpoint of a balance between SCEs control and μfluctuation reduction. These results indicate necessity of quantum well channel structure in InAs-OI MOSFETs and these should be considered in future transistor design.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
