Abstract

Space Electrostatic Discharge Effect (SESD) and Single Event Effect (SEE) are two major space environmental factors that cause spacecraft failure. Previous studies have established that both can lead to soft errors such as upset of memory cells. An ESD generator and a pulsed laser experimental facility were used to test a low-power asynchronous timing monolithic SRAM. The characteristics of soft error number, single/multi-bit upsets, and supply current values were compared for similarities and differences. The test revealed that SEE-induced soft errors were mainly single-bit upsets (SBU), whereas SESD-induced soft errors were predominantly multi-bit upsets (MBU). Additionally, when soft errors occur in the circuits, the current of the power supply drops, which enables the device to be evaluated by monitoring the current value. This study provides experimental support for distinguishing device errors caused by these two effects, as well as references for further accurate identification of in-orbit faults and corresponding protection design.

Full Text
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