Experimental Study on the Role of Hot Carrier Induced Damage on High frequency Noise in Deep Submicron NMOSFETs

Abstract

Impact of hot carrier induced interface damage and its spatial location on RF noise in deep sub-micrometer NMOSFETs is studied. A significant increase in minimum noise figure NFmin and noise resistance Rn after hot carrier stress, which cannot be explained alone by the change of the carrier density in the inversion layer, was observed. It was demonstrated that the presence of interface states at source side shows much greater impact on the degradation of NFmin and Rn. This provides strong experimental evidence that the local noise at source side plays a more important role in determining the channel noise.