Experimental study on polishing performance of CeO2 and nano-SiO2 mixed abrasive

Qiang He

doi:10.1007/s13204-018-0657-4

Abstract

In this paper, superfine SiO2 nanoparticles are utilized as composite abrasive additive to improve the polishing property of CeO2, which is prepared through chemical precipitation method by rare-earth chloride as raw materials, silicofluoric acid as fluoride, Na2CO3 as modifier, and NH4HCO3 as precipitator. XRD, SEM, particle size analyzer, and atomic force microscopy are applied to characterize the physical structure, morphology, and size distribution. Furthermore, the as-prepared composite abrasive is used to perform chemical mechanical polishing (CMP) experiment on K9 glass to identify the impact of different mass fraction of SiO2 on the CMP property of work materials. The results show that the composite abrasive contained 0.5% SiO2 has the best polishing property, the surface roughness, and material removal rate of glass after polishing can reach at 1.3157 nm and 22.6 nm/min, respectively.

Highlights

CeO2 is an important rare-earth oxide and has always been used to polish hard materials such as glass substrate with high hardness, though CeO2 itself has relatively low Moh’s hardness (6–7) (Belkhir et al 2009; Savio et al 2009; Chen et al 2010)
Researches show that compare with other traditional inorganic abrasives, CeO2 is more suitable for conduct chemical mechanical polishing (CMP) on glass substrates with several advantages including high polishing rate and good polishing quality (Armini et al 2007; Chen et al 2015; Lu et al 2011)
To enhance the quality and efficiency of wafer CMP, Zhang et al (2014) prepared a green waterborne slurry through homogeneous precipitation by C eO2/SiO2 composite abrasive and investigated its polishing property on silicon wafers, the results showed that as the pH value of polishing slurry increased, the removal rate of materials decreased with time

Summary

Introduction

CeO2 is an important rare-earth oxide and has always been used to polish hard materials such as glass substrate with high hardness, though CeO2 itself has relatively low Moh’s hardness (6–7) (Belkhir et al 2009; Savio et al 2009; Chen et al 2010). To enhance the quality and efficiency of wafer CMP, Zhang et al (2014) prepared a green waterborne slurry through homogeneous precipitation by C eO2/SiO2 composite abrasive and investigated its polishing property on silicon wafers, the results showed that as the pH value of polishing slurry increased, the removal rate of materials decreased with time.

Results

Conclusion