Abstract
SiC single crystal is a good semiconductor material with high breakdown electric field strength, high thermal conductivity, high carrier saturation drift speed and low relative dielectric. However, SiC has high hardness and brittleness, high chemical stability, so the polishing efficiency of existing polishing methods is low. In this paper, a plasma enhanced electrochemical mechanical polishing method for SiC was proposed. The relationship between peak voltage, frequency and duty ratio with polishing efficiency and surface roughness was studied.
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