Abstract
This study focuses on an evaluation of iron losses of an amorphous ring under different inverter excitations. We examine the iron loss characteristics as a function of carrier frequency under Si-IGBT- and GaN-FET-inverter excitations. The ring test under GaN-FET-inverter excitation at high carrier frequency shows drastically large iron loss compared with that excited by Si-IGBT-inverter because of the ringing derived from the high speed switching.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
