Experimental study of transport in InAs Quantum Hot Electron Transistor

Abstract

We study a Quantum Hot Electron Transistor, an original transistor made of InAs/AlSb heterostructures with high speed intrinsic transport. It is a unipolar vertical transport device, based on the concept of hot electron transistor. Devices using different heterostructure designs have been grown, processed and characterized. Both resonant and parasitic transport of electrons is studied by mean of the static output characteristics of the transistors. We demonstrated that a key parameter is the design and thickness of the collector barrier. For 15nm-thin barriers, we obtained static current gain of 5 associated to a base transit time of 140 fs.