Abstract
The effect of porosity on the charge-discharge characteristics of thin films based on an Si–O–Al nanocomposite with two types of structure, homogeneous and columnar, is studied. An additional increase in the porosity of thin Si–O–Al films is achieved by removing the $${\text{Si}}{{{\text{O}}}_{x}}$$ phase, where $$1 < x \leqslant 2,$$ when etching in a solution of hydrofluoric acid. The charge-discharge characteristics of the films were investigated in half-cells in the galvanostatic mode. It is shown that processing films with a columnar structure leads to an increase in their specific capacity and stability under extreme charge-discharge modes.
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