Abstract
Optical properties of a heavily-doped GaAs epitaxial layer with a regular grating at its surface have been experimentally investigated in the terahertz spectral range. Reflectivity spectra for the layer with a profiled surface drastically differ from those for the as-grown epilayer with a planar surface. For s-polarized radiation, this difference is totally caused by the electromagnetic wave diffraction at the grating. For p-polarized radiation, additional resonant dips arise due to excitation of surface plasmon-phonon polaritons. Terahertz radiation emission under significant electron heating in an applied pulsed electric field has also been studied. Polarization measurements revealed pronounced peaks related to surface plasmon-phonon polariton resonances of the first and second order in the emission spectra.
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