Abstract
In a first part a method permitting the direct measurement of surface charge mobility, derived from the action of a magnetic field on surface conductivity, is presented and compared to indirect methods. Applied to Si and Ge this measurement shows that the rate of variation of surface conductivity, lower than might be expected from purely electrostatic consideration, is not produced by a trapping of carriers by surface states. It is a consequence of the decreasing of surface mobility with increasing electric field in surface inversion layers. This decrease is less rapid than expected from Schrieffer's theory. In a second part the various time constants of variation of surface conductivity are examined. The long time constant variations in semiconductors covered by a dielectric layer can be interpreted by the influence of mobile charges in the bulk or at the surface of the dielectric. Short time constant variations, in the case of inversion layers conductivity depends on the generation rate of carriers in space charge regions as described by Shockley. Theoretical models are proposed with experimental verification.
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