Experimental Study of Radiation Defects in Semiconductors and Control of Semiconductor Properties by Irradiation

Abstract

As we mentioned above, the primary processes of displacement of atoms from their crystal sites can be represented by various models. However, modern theories do not allow to predict the stability of the defects produced by irradiation. The energy spectrum of local centers produced by irradiation of semiconductors cannot be calculated, although progress has been made with quasi-phenomenological theories of such centers based on experimentally determined parameters /35/. Most experimental investigations of radiation damage in semiconductors have used techniques which are in part related both to solid state physics and to the production of semiconductors with properties controlled by the nature and the spectra of the energy levels of radiation-induced defects. The problems of solid state physics which can be most conveniently studied in semiconductors include the threshold energy of defect production, and the generation and nature of simple and complex radiation damage.