Abstract
Perpendicular transport characteristics of n-type AlxGa1−xN/GaN superlattices are presented. Planar and mesa-etched superlattice structures are employed to identify the perpendicular resistance. Perpendicular transport measurements in Al0.22Ga0.78N/GaN superlattices display linear current–voltage characteristics with a resistivity that is a factor of 6.6 higher than for bulk material. A theoretical model is developed for perpendicular transport in AlxGa1−xN/GaN superlattices based on sequential tunneling. The model shows that short superlattice periods are required to minimize the perpendicular resistivity.
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