Abstract

Recombination of H3+ with electrons is a key process for many plasmatic environments. Recent experiments on storage ring devices used ion sources producing H3+ with enhanced populations of H3+ ions in the para nuclear spin configuration to shed light on the theoretically predicted faster recombination of para states. Although increased recombination rates were observed, no in situ characterization of recombining ions was performed. We present a state selective recombination study of para- and ortho-H3+ ions with electrons at 77 K in afterglow plasma in a He/Ar/H2 gas-mixture. Both spin configurations of H3+ have been observed in situ with a near infrared cavity ring down spectrometer (NIR-CRDS) using the two lowest energy levels of H3+. Using hydrogen with an enhanced population of H2 molecules in para states allowed us to influence the [para-H3+]/[ortho-H3+] ratio in the discharge and in the afterglow. We observed an increase in the measured effective recombination rate coefficients with the increase of the fraction of para-H3+. Measurements with different fractions of para-H3+ at otherwise identical conditions allowed us to determine the binary recombination rate coefficients for pure para-H3+ pαbin(77 K) = (2.0±0.4)×10−7 cm3s−1 and pure ortho-H3+ oαbin(77 K) = (4±3)×10−8 cm3s−1.

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