Experimental study of millisecond pulse laser ablation biased silicon-based PIN photodiodes

Abstract

The investigation of the highest surface temperature and damage region of silicon-based photodiodes (PIN) was conducted through irradiation with millisecond (ms) pulse lasers. The convex spots on the surface of the biased photodiode were observed to be diminished by a millisecond pulse laser for the first time. The experimental results presented herein demonstrate the presence of a bump, even in cases where the maximum surface temperature of the damaged area does not exceed the melting point. The mechanism underlying this phenomenon was elucidated through the integration of simulation and experimentation in our study. The irradiation of silicon-based semiconductor detectors with lasers generates internal Joule heat, causing the temperature at the junction depth to initially reach the melting point. The expansion resulting from the Si phase transition induces outward pressure on Si3N4, leading to the eventual formation of a convex morphology. The findings of our study present a novel approach to enhance the security of photodetectors.