Abstract
Abstract Wave impedances and propagation constants of waves travelling along the electrodes of a long FET structure were experimentally investigated. For this purpose, a GaAs MESFET with large gate width was fabricated. Connecting pads on both ends of the gate and drain electrodes make it possible to measure the four-port S-parameters of the structure. Using these results, it is shown that a great improvement in the gain is possible, if the normally open ends of the FET are connected to the optimum terminations.
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